E-MRS Spring Meeting 1999, Symposium P

E-MRS Spring Meeting 1999, Symposium P

SESSION II : In-situ Characterization and Control of epitaxial growth

Tuesday Morning-2 & Afternoon-1

First Autor Title Where from ?

11.00-11.30
P-II.1 Briones, F. (invited) Chemical Modulation Techniques for in-situ optical characterization of III-V surfaces in MBE Madrid/Spain

11.30-12.00
P-II.2 Ozanyan, K.B. (invited) Static and growing InPsurfaces: Reflectance-Anisotropy-Spectroscopy under the conditions of solid-source MBE <abstract> Sheffield, U.K.

12.00-12.15
P-II.3 Bhattacharya, A. In-situ monitoring of MOVPE grown distributed Bragg-reflector structures using Reflectance Anisotropy Spectroscopy Berlin, Germany

12.15-12.30
P-II.4 Zapien, J.A. Real time spectroscopic ellipsometry from 1.5 to 6.5 eV UnivPark,PA/USA

lunch break

14.00-14.30
P-II.5 Ebert, M. (invited) In-situ monitor. and control of MOVPE growth by combined RDS and ellipsometry measurements <abstract> Raleigh/USA

14.30-14.45
P-II.6 Wöhner, T. Real time spectroscopic ellispometry monitoring of the SiC growth during the interaction process of elemental carbon with Si surfaces Ilmenau, Germany

14.45-15.00
P-II.7 Allwood, D.A. Variable angle surface photoabsorption (SPA) of deoxidation of III-V wafers Oxford, UK

15.00-15.15
P-II.8 Bonanni, A. Reflectance difference spectroscopy of enhanced Mn intra-ion transitions in P-doped diluted magnetic semiconductors Linz, Austria

15.15-15.30
P-II.9 Scheible, P. In situ characterization of boron nitride layer growth by polarized FT-IR reflection spectroscopy Stuttgard/Germany

15.30-15.45
P-II.10 Pickering, C. Real-time process control of Si/SiGe heterostructures using Spectroscopic Ellipsometry Malvern/ U.K.

Poster

Haberland, K. Reflectance anisotropy-based optical sensors for realtime monitoring of epitaxial growth Berlin, Germany

Neuwirt An algorithm to determine the compostion and growth rate from in-situ taken spectral ellipsometry data Linz, Austria

Lim, D. In-situ second harmonic spectroscopy of surface vs. bulk boron-doped Si(001) Austin/ TX/ USA

Logothetidis, S. REAL-TIME MULTIWAVELENGTH ELLIPSOMETRY DIAGNOSTICS FOR MONITORING DRY CLEANING OF Si WAFERS AND TiNx DEPOSITION Thessaloniki/Greece

	First Autor	Title	Where from ?
11.00-11.30 P-II.1	Briones, F. (invited)	Chemical Modulation Techniques for in-situ optical characterization of III-V surfaces in MBE	Madrid/Spain
11.30-12.00 P-II.2	Ozanyan, K.B. (invited)	Static and growing InPsurfaces: Reflectance-Anisotropy-Spectroscopy under the conditions of solid-source MBE <abstract>	Sheffield, U.K.
12.00-12.15 P-II.3	Bhattacharya, A.	In-situ monitoring of MOVPE grown distributed Bragg-reflector structures using Reflectance Anisotropy Spectroscopy	Berlin, Germany
12.15-12.30 P-II.4	Zapien, J.A.	Real time spectroscopic ellipsometry from 1.5 to 6.5 eV	UnivPark,PA/USA
lunch break
14.00-14.30 P-II.5	Ebert, M. (invited)	In-situ monitor. and control of MOVPE growth by combined RDS and ellipsometry measurements <abstract>	Raleigh/USA
14.30-14.45 P-II.6	Wöhner, T.	Real time spectroscopic ellispometry monitoring of the SiC growth during the interaction process of elemental carbon with Si surfaces	Ilmenau, Germany
14.45-15.00 P-II.7	Allwood, D.A.	Variable angle surface photoabsorption (SPA) of deoxidation of III-V wafers	Oxford, UK
15.00-15.15 P-II.8	Bonanni, A.	Reflectance difference spectroscopy of enhanced Mn intra-ion transitions in P-doped diluted magnetic semiconductors	Linz, Austria
15.15-15.30 P-II.9	Scheible, P.	In situ characterization of boron nitride layer growth by polarized FT-IR reflection spectroscopy	Stuttgard/Germany
15.30-15.45 P-II.10	Pickering, C.	Real-time process control of Si/SiGe heterostructures using Spectroscopic Ellipsometry	Malvern/ U.K.
Poster
	Haberland, K.	Reflectance anisotropy-based optical sensors for realtime monitoring of epitaxial growth	Berlin, Germany
	Neuwirt	An algorithm to determine the compostion and growth rate from in-situ taken spectral ellipsometry data	Linz, Austria
	Lim, D.	In-situ second harmonic spectroscopy of surface vs. bulk boron-doped Si(001)	Austin/ TX/ USA
	Logothetidis, S.	REAL-TIME MULTIWAVELENGTH ELLIPSOMETRY DIAGNOSTICS FOR MONITORING DRY CLEANING OF Si WAFERS AND TiNx DEPOSITION	Thessaloniki/Greece