E-MRS Spring Meeting 1999, Symposium P
SESSION III : Nondestructive characterization of complex
structures and devices
Wednesday Afternoon - I
| First Autor | Title | Where from ? | |
| 14.00-14.30 | Chen, W.M. (invited) | Application of optically detected magnetic resonance in semiconductor layered structures <abstract> | Linköping/Sweden |
| 14.30-15.00 | Fried, M. (invited) | Nondestructive optical depth profiling
& real-time evaluation of spectroscopic data
<abstract> |
Budapest/Hungary |
| 15.00-15.15 | Coonan, B. | Investigation of SiGe heterostructures using non-destructive optical techniques | Cork, Ireland |
| 15.15-15.30 | Ferrieu, F. | Variable angle spectroscopic ellipsometry of SiGe/Si composition graded profiles of strained heterostructures for hetero-junction bipolar transistors. | Meylan/ France |
Friday Morning - II
| First Autor | Title | Where from ? | |
| - coffee break -
|
|||
| 10.45-11.05 | Finkman, E. | The dielectic response function in epitaxial SiGeC layers grown on Si | Haifa/Israel |
| 11.05-11.25 | Röseler, A. | Characterization of thin films on semiconductor surfaces by infra-red ellipsometry | Berlin, Germany |
| 11.25-11.45 | Bukkems, H. | Analysis of
In( 1-x)Ga(x)As(y)P(1-y) based layer stacks using spectroscopic ellipsometry in the NIR spectroscopic range |
Delft/NL |
| 11.45-12.00 | Boher, P. | A new combined instrument with uv-visible and far-infrared spectroscopic ellipsometry: application to semiconductor characterization | Bois Colombes/ Fr |
| 12.00-12.15 | Henrion, W. | Optical properties and energy band structure of Ru2Si3 and Ru2Ge3 | Berlin/Deutschland |
| 12.15-12.30 | Murtagh, M. | InGaP/GaAs Heterojunction-Bipolar-Transistor (HBT) electronic properties | Cork/Ireland |
| Poster | |||
| Wilson, P. T. | Frequency domain interferometric second harmonic spectroscopy | Austin/ Texs/ USA | |
| Nayar, V. | Spectroscopic ellipsometry characterization of advanced dielectrics | Malvern/ U.K. | |
| Bauer, M. | Time resolved reflectivity ... | Stuttgart/Germany | |
| Cuadras, A. | Optical characterization of thermally oxidized Si1-x-yGexCy layers | Barcelona/Spain | |
| Djurišic, A.B. | Optical dielectric funktion of semiconductors | Dresden/Germany | |
| Boher, P. | A new combined system including spectroscopic ellipsometry and grazing X-ray reflectance | Bois Colombes/Fra | |
| Moriarty, G.R. | Optical and structural properties of InGaP/GaAs heterostructures | Cork/ Ireland | |
| Moumains, Kh | Light and heavy hole excitons in absorption and magnetoabsorption spectra of InGaAs/GaAs MQWs | St. Petersburg,Rus | |
| Lohner, T. | Ion implantation induced damage depth profile in silicon studied by ellipsometry and Rutherford backscattering spectrometry | Budapest/ Hungary | |
| Shi, J.L. | Defect related photoluminescence of SiGe/Si heterostructures grown by APCVD | Delf, NL | |
| Simoen, E. | Impact of neutron irradiation on optical performance of InGaAsP laser diodes | Leuven/Belgium | |
| Masenelli, B. | Fabrication and characterization of semiconductor-based microcavities | Ecully/France | |
| Polit, J. | The application of the reflection-absorption spectroscopy to the seciconductor thin films | Rzeszow/Poland | |
| Piotrowski, T. | Application of infrared extended source transmission for bonding control of silicon wafers | Warsaw/ Poland | |
| Tonova, D.A. | Depth profiling of graded index structures by optical methods | Sofia/Bulgaria | |
| Toušková | Photovoltage measurement for ... | Prague/Czech R. | |
| Holiney, R. Yu. | Electrorefectance spectroscopy of PLD Hg1-xCdxTe films on Si substrates | Kyiv/ Ukraine | |
| Kulik, M. | Ellipsometric studies of optical constants of ion implanted GaAs and Si layers | Lublin/Poland | |
| Piotrowski, T. | Thermooptical method of carrier distribution visualisaton in semiconductors | Warsaw/ Poland | |
| Dmitruk, N.L. | Ultraviolet responsivity control in Schottky barrier heterostructures with textured interface | Kiev/Ukraine | |
| N.R.Agamalyan | OPTICAL AND PHOTOELECTRIC PROPERTIES
OF PT, PZT AND PLZT THIN FILMS
AND INFRARED REFLECTIVITY SPECTRA PZT(52/48) AND COPPER DOPED PT THIN FILMS |
Ashtarak, Armenia | |
| Glinchuk, K.D. | Characterization of residual carbon in undoped semi-insulating GaAs by low temperature (77K) photoluminescence | Kiev/Ukraine | |
| Romanyuk, B:N. | Effect of in situ ultrasound treatment on the structure of ion-beam modified layer in silicon | Kiev/ Ukraine | |
| Shpotyuk, O.I. | Infrared spectroscopy of ternary chalcogenide semiconductors for optical application | Lviv/Ukraine | |
| Khlyap, G. | Optical properties of heterostructures based on A2B6materials | Dragobyc/Ukraine | |
| Schram, T. | The use of visible- (VIS-SE) and infrared spectroscopic ellipsometry (IR-SE) for the characterization of surface treated aluminum | Brussels/Belgium | |
| Kovalenko, V.F. | Radiative recombination in GRaDED-Bandgap AlGaAs allys | Odessa/Ukraine | |