SESSION V : Optical characterization of wide-gap materials

Thursday morning
 
 
 

	First Autor	Title	Where from ?
9.00-9.30	Borensztein, Y. (invited)	Investigation of 3C-SiC(001) surface  reconstructions by reflectance anisotropy spectroscopy  <abstract>	Paris/France
9.30-10.00	Edwards, E.V. (invited)	OPTICAL CHARACTERIZATION OF WIDE-GAP SEMINCONDUCTORS  <abstract>	Sweden
10.00-10.15	Peters, S.	In-situ monitoring of GaN	Berlin, Germany
10.15-10.30	Bentoumi, G.	Si doping of cubic heteroepitaxial GaN Layers	Grenoble/ France
- coffee break -
11.00-11.15	Cobet, C.	Optical properties of 3C-, 6H- and 4H-SiC in the spectral range from 2.5 eV to 25eV investigated by spectroscopic ellipsometry	Berlin, Germany
11.15-11.30	Bentoumi, G.	Strain in cubic GaN films versus their residual hexagonal GaN content	Grenoble, France
12.00-12.15	Wagner, V.	Raman and Electroreflectance analysis of internal electric fields in ZnSe	Würzbrg/Germany
12.15-12.30	Pagès, O.	Raman analysis of Lo phonon-plasmon coupled modes at ZnS:N(n+, p+)-GaAs interfaces	Metz/ France
Poster
	Meyne, C.	In-situ monituring  of ZnS/GaP and ZnSe/GaAs MOVPE growth with reflectance anisotropy spectroscopy and spectroscopic ellipsometry	Berlin, Germany
	Barfels, T.	Luminescence of GaN layers	Rostock/ Germany
	Walton, C.D.	Infra-red reflectivity of ion implanted and pulsed excimer laser irradiated 4H-SiC	Hull, England
	Shturbin, A.V.	Optical method of silicon carbide epitaxial films characterization	St.Petersburg/Rus
	Nunes, P.	Properties of doped ZnO thin films deposited by spray pyrolyses and magnetron sputtering	Capricia/Portugal
	Kudryashov, V.E.	Influence of sapphire substrate on the emission spectra of GaN based light emitting diodes	Moscow/ Russia
	Kharlapenko, S.F.	Radiative lifetime calculation for...	St.Petersburg/Russ
	Zacgarov, A.	Model of intrinsic microwave...  Microwave Photocond. ...	Minsk/Belar.
	Bryja, L.	EFFECT OF ABOVE BAND-GAP ILLUMINATION ON STRUCTURE OF FREE   EXCITON REFLECTION SPECTRA OF ZnSe	Wroclaw/Poland