E-MRS Spring Meeting 1999, Symposium P
Session VI : Characterization of amorphous,
poly- and nano-crystalline materials
Thursday afternoon, 14.00 – 16.30
| First Autor
|
Title | Where from ? | |
| 14.00-14.30 | Carius, R. (invited) | Optical spectroscopy on photovoltaic materials and devices <abstract> | Juelich/Germany |
| 14.30-15.00 | Collins, R.W. (invited) | Real time analysis of amorphous and microcrystalline silicon film growth by rotating-comensator multichannel ellipsometry | PennState/USA |
| 15.00-15.15 | Gruska, B. | Ellipsometric analysis of polysilicon layers | Berlin/Germany |
| 15.15-15.30 | Hong, J. | Optical characterization of hydrogenated amorphous carbon (a-C:H) thin films deposited from methane plasmas | Nantes, France |
| 15.30-15.45 | Smets, A.H.M. | In-situ ellipsometry on high rate depostion of a-Si:H thin films using an expanding thermal plasma | Eindhoven/NL |
| 15.45-16.00 | Tolmatchev, A.V. | Optical studies of temperature-induced transform of amorphous!US hydrogenated carbon | St. Petersburg, Rus |
| 16.00-16.15 | Petrik, P. | In-situ spectroscopic ellipsometry for the characterization of polysilicon formation inside a vertical furnace | Budapest/Hungary |
| 16.15-16.30 | Lavareda, G. | Role of the RF power on DOS and growth rate of a-Si:H produced by PECVD | Lisboa/Portugal |
|
Poster |
|||
| Radoi, R. | Roughness characterization of polysilicon surface by optical spectroellipsometry. | Bucharest/Roman | |
| Davazoglou, D. | Optical characterisation of ultrathin semi-transparent silicon films using transmission and reflectio measurements | Attiki/Greece | |
| Gartner, M. | Optical and microstructural characteriztion of A-sion thin films deposited by LPCVD | Bucharest/ Roman | |
| Kudryavtsev, Y.V. | Optical properties of some transition metals disilicides thin films in amorphous and crystalline states | Kiev/Ukraine | |
| Vieira, M. | UV/vis/nir detector based on mac-Si:H | Lisboa/Portugal | |
| Yerokhov, V. | Optical characterization of porous silicon layers | Lviv/Ukraine |