  |
|
| Homepage Markus Pristovsek | |
|---|---|
|
Rendering of our in-situ STM for MOVPE by Dr. R. Kremzow | Working in the field ofsurface science during semiconductor growth or very small molecules on very hot surfaces ...
For that I developed, built, and applied innovative
|
| my motto |
|
The reasonable man adapts himself to the world; the unreasonable man persists in trying to adapt the world to himself. Therefore, all progress depends on the unreasonable man. |
| George Bernard Shaw |
| what I'm doing else |
| about myself |
Born on the 9th june 1970 in Berlin, married on 9th may 2003 in Berlin, one daughter, one son.
From 1989 I studied basic physics at the technical university of berlin. In 1995 I obtained my Diploma at the Richter Group about "Growth and Passivation of III-V-Semiconductors".
I did my PhD also in the same group together with the other people of the MOVPE- and optical in-situ-spectroscopy group. Here is a picture of PhD-students of our group (190 kB). As you can see, we also had a lot of fun, too. The in-situ monitoring was quite successful and led to the foundation of the company LayTec which is still thriving today. Not least because nitride semiconductor growth is very challenging and requires good in-situ monitoring for success.
In 2000 just after I got my PhD, I did not join LayTec but I went to Tsukuba. There I worked as a Postdoc at the National Institute for Materials Science in the Nanodevice Research Group. In-situ characterisation with reflectance anisotropy spectroscopy (RAS), RHEED, and in-situ Scanning Tunneling Microscopy (STM) during III-V MBE growth was the main target. I aquired a fellowship grant for the Japanese Society for the Promotion of Science (JSPS) on in-situ measurements of doping by RAS. But our research strayed as far as malaria medicine catalyst development using sulphur terminated GaAs to bound Pt-organic catalyst. Such catalysts are used for the Heck reaction and Suzuki coupling; the discoverer of those recieved the 2010 Nobel price in chemstry. (And our findings from 2002 are now to be commercialized in 2012 in Japan.)
After returning to Berlin in January 2003 I worked at the Ferdinand-Braun-Institut für Höchstfrequenztechnik on MOVPE growth of antimonides.
Since November 2003, I joined again the TU Berlin, this time as "assistant" and leader of the MOVPE activities. We have studied new materials such as InN and novel ferromagnetic semiconductors. But currently our group is focussing on InGaN layer for green lasers and AlInGaN for UV-LEDs.
A very special topic is our in-situ STM for MOVPE, which is the first and only STM for MOVPE, and also the only STM worldwide that can operate at 700°C near atmospheric pressure. Other innovative tools are the only multi-channel RAS setup for semiconductor epitaxy, and three spectroscopic ellipsometers for during growth studies.
| address |
Tel. ++49-30-314-22 7 45, Fax ++49-30-314-21 7 69
| Book Chapter and Thesis |
| Refereed Papers |
| International Extended Abstracts |
Growth of InN on GaN by Metalorganic Vapor Phase Epitaxy using tertiary-butylhydrazine as alternative nitrogen source
R. Kremzow, M. Pristovsek, J. Stellmach, Ö. Savaş, M. Kneissl
Proc. 13th EW-MOVPE workshop (2009) 233-236, C.07
2D-3D Transition and Relaxation During Strained Compound Semiconductor Growth
M. Pristovsek, M. Leyer, J. Stellmach, R. Kremzow, M. Kneissl
Proc. 13th EW-MOVPE workshop (2009) 245-236, C.10
Growth of GaN on (10-10) (m-plane) sapphire by metalorganic vapor phase epitaxy
S. Ploch, M. Frentrup, T. Wernicke, M. Pristovsek, M. Weyers, M. Kneissl
Proc. 13th EW-MOVPE workshop (2009) 317-320, D.07
Characterisation of MOVPE grown InGaN
M. Leyer, Ch. Meißner, M. Pristovsek, M. Kneissl
Proc. 12th EW-MOVPE workshop (2007) 255-256, G5
Formation of InAs Quantum Dots on GaAs:Si investigated with in-situ STM
R. Kremzow, M. Pristovsek, B. Rähmer, M. Breusing, M. Kneissl
Proc. 12th EW-MOVPE workshop (2007) 265-266, G8
In-situ Scanning Tunneling Microscopy during MOVPE
M. Pristovsek, B. Rähmer, M. Breusing, R. Kremzow, W. Richter
Proc. 11th EW-MOVPE workshop (2005) 111-115, INV
A multichannel RAS setup for fast in situ measurements
Ch. Kaspari, M. Pristovsek, S. Weeke, W. Richter
Proc. 11th EW-MOVPE workshop (2005) 155-157, C01
In-situ SPM Measurements during MOVPE
B. Rähmer, M. Breusing, R. Kremzow, M. Pristovsek, W. Richter
Proc. 11th EW-MOVPE workshop (2005) 167-169, C04
InN growth on sapphire using different nitridation procedures
M. Drago, C. Werner, M. Pristovsek, U.-W. Pohl, W. Richter
Proc. 11th EW-MOVPE workshop (2005) 431-433, H15
The Influence of GaAs (001) Surface Reconstruction on the Doping Induced Reflectance Anisotropy Signals
Markus Pristovsek, Shiro Tsukamoto, Nobuyuki Koguchi, Jerzy Bernholc, and Wolf Gero Schmidt
21st Electronics Materials Symposium, Izu-Nagaoka (2002), 257-258
Basic Studies on the Origin of the Optical Anisotropy of GaAs Surfaces
M. Pristovsek, S. Tuskamoto, N. Koguchi, B. Han, K. Haberland, J.-T. Zettler, W. Richter
6th Int. Symposium on Advanced Physical Fields, Tsukuba, (2001), 267-270
Study of Sulfur terminated InAs and GaAs (001)
Markus Pristovsek, Shiro Tsukamoto, Noboyuki Koguchi
8th Int. Conf. on the Formation of Semiconductor Interfaces, Sapporo, (2001), 202
The Origin of the Optical Anisotropy of Doped GaAs (001) Surfaces
M. Pristovsek, S. Tuskamoto, N. Koguchi, B. Han, K. Haberland, J.-T. Zettler, W. Richter
20th Electronics Materials Symposium, Nara (2001), 131-132
Formation of Mesoscopic Corrugation on (113) Surfaces - Molecular Beam Epitaxy versus Metal-Organic Vapour Phase Epitaxy
M. Pristovsek, S. Tsukamoto, N. Koguchi
28th Int. Symposium on Compound Semiconductors, Tokyo, (2001), 29
MOVPE of GaAsN on GaAs(001) using tertiarybutylhydrazine
T. Schmidtling, M. Klein, M. Pristovsek, K. Knorr, U. W. Pohl, W. Richter
Proc. 8th EW-MOVPE workshop (1999) 433-435, F1M10
Reconstruction and step-bunching on (001) GaAs
M. Pristovsek, F. Poser, J.-T. Zettler, W. Richter
Proc. 8th EW-MOVPE workshop (1999) 353-356, T2M5
Investigation of (n11) GaAs Surfaces with Reflectance Anisotropy Spectroscopy
M. Pristovsek, H. Menhal, J.-T. Zettler, W. Richter, C. Setzer, J. Plaaten, K. Jacobi
Proc. SIO-97 (1997) 96-97
Reflectance Anisotropy Spectroscopy Study of Decapped InP(100) Surfaces
C. Goletti, N. Esser, J. Foeller, M. Pristovsek, U. Resch-Esser, V. Wagner, W. Richter
15th General Conf. Condens. Mater. Div. EPS, Baveno-Stresa (1996)
| International invited talks |
Growth and polarity control of InN grown by metal-organic vapour phase epitaxy
E-MRS Spring Meeting 2011 in Nizza, Frankreich
In-situ monitoring of doping with Reflectance Anisotropy Spectrocopy
3rd NanoCharm Workshop on Non-Destructive Real Time Process Control 2010, Berlin
Metal-Organic Vapour Phase Epitaxy of Nitride Semiconductors
IInd Rainbow-Workshop 2010 in Madrid, Spanien
Towards Atomic Resolution during Vapour Phase Epitaxial Growth
SemiconNano 2009, Anan, Japan
State of the Art of in-situ Monitoring in Metal Organic Vapour Phase Epitaxy
2007 International Seminar at Anan National College of Technology in Anan, Japan
Surface and thin film analysis during vapour phase epitaxial growth
13th International Summer School on Crystal Growth (2007) in Salt Lake City, USA
in-situ STM in MOVPE - Promises, Problems, Pictures
13th International Conference on MOVPE (2006) in Miyazaki, Japan
In-situ Scanning Tunneling Microscopy during MOVPE
11th European Workshop on MOVPE (2005) in Lausanne, Schweiz
In-situ Reflectance Anisotropy Spectroscopy on III-V Semiconductors: Surfaces and Doping
1st Optical Spectroscopy of Surfaces and Interfaces (OSI-2001) in Bonn, Deutschland
| Back to the Kneissl group homepage |