english nihongo
Privatdozent Dr. Markus Pristovsek

    Unser in-situ STM für MOVPE-Wachstum
    gerendert von Dr. R. Kremzow

Oberflächenphysik des
Halbleiterwachstums

oder

Verhalten sehr kleiner Moleküle auf sehr heißen Oberflächen ...

Das erfordert die Konzeption, den Bau und die Anwendungung
innovativer (meist optischer) Messmethoden. Neben Ellipsometrie
und Reflexionsanisotropie Spektroskopie, ist rechts das weltweit
einzigartige Rastertunnelmikroskop für solche Messungen zu sehen.

 

    Mein Motto

 

    Zeit jenseits der Physik


 

    Persönliches ...

 

    Institutsadresse

 

    Abschlussarbeiten und Buchkapitel

  1. In-situ monitoring towards monolayer precision for III-V semiconductor growth
    M. Pristovsek
    Habilitation, Technische Universität Berlin (2012)

  2. Semiconductor Nanostructures
    M. Pristovsek, W. Richter
    (Springer, Berlin-Heidelberg-New York, 2008) Chapter 3, 67–86

  3. Fundamental Growth Processes on Different Gallium Arsenide Surfaces in Metal-Organic Vapor Phase Epitaxy
    M. Pristovsek
    Ph.D. thesis, Technische Universität Berlin (2000)

 

    Veröffentlichungen in referierten Zeitschriften

Teilweise auch in der Literaturliste der Forschungsgruppe Kneissl zu finden.

  1. Development of InAs quantum dots during growth on GaAs (001)
    M. Pristovsek, R. Kremzow, M. Kneissl
    Phys. Rev. B (under revision)

  2. Wetting layer thickness of InGaN quantums dots on GaN (0001)
    M. Pristovsek, A. Kadir, C. Meissner, T. Schwaner, M. Leyer, J. Stellmach, M. Kneissl, F. Ivaldi, S. Kret
    J. Crystal Growth (under revision)

  3. Role of nitridation on the growth and the polarity of InN by metal-organic vapor phase epitaxy
    Duc V. Dinh, D. Skuridina, S. Solopow, M. Pristovsek, P. Vogt, M. Kneissl
    J. Appl. Phys. (submitted)

  4. Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE
    A. Kadir, K. Bellmann, T. Simoneit, M. Pristovsek, M. Kneissl
    phys. stat. sol. (a) early view (2012)

  5. Topography of (20-21) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy
    S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, M. Weyers, J. Zweck, M. Kneissl
    J. Crystal Growth 356 (2012) 70-74

  6. MOVPE growth of semipolar (11-22) AlN on (10-10) sapphire
    J. Stellmach, M. Frentrup, F. Mehnke, M. Pristovsek, T. Wernicke, M. Kneissl
    J. Crystal Growth 335 (2012) 59-62

  7. Growth and Characterizations of Semipolar (11-22) InN
    Duc V. Dinh, D. Skuridina, S. Solopow, M. Frentrup, M. Pristovsek, P. Vogt, M. Kneissl, F. Ivaldi, S. Kret, A. Szczepanska
    J. Appl. Phys. 112 (2012) 013530

  8. In situ access to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces
    Oliver Supplie, Thomas Hannappel, Markus Pristovsek, Hennig Döscher
    Phys. Rev. B 86 (2012) 035308

  9. Surface diffusion and layer morphology of (11-22) GaN grown by metal-organic vapor phase epitaxy
    S. Ploch, T. Wernicke, D. V. Dinh, M. Pristovsek, M. Kneissl
    J. Appl. Phys. 111 (2012) 033526

  10. Comparison study of N- and In-polar {0001} InN layers grown by MOVPE
    Duc V. Dinh, M. Pristovsek, S. Solopow, D. Skuridina, M. Kneissl
    phys. stat. sol. (c) 9(3-4) (2012) 977-981

  11. Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy
    M. Pristovsek, A. Kadir, C. Meissner, T. Schwaner, M. Leyer, M. Kneissl
    J. Appl. Phys. 110 (2011) 073527

  12. Growth mechanism of InGaN quantum dots during metalorganic vapour phase epitaxy
    A. Kadir, C. Meissner, T. Schwaner, M. Pristovsek, M. Kneissl
    J Crystal Growth 314 (2011) 40–45

  13. Single phase 11-22 GaN on (10-10) sapphire grown by metal-organic vapor phase epitaxy
    S. Ploch, J. B. Park, J. Stellmach, T. Schwaner, M. Frentrup, T. Niermann, T. Wernicke, M. Pristovsek, M. Lehmann, M. Kneissl
    J Crystal Growth 331 (2011) 25–28

  14. Growth Mechanism of Embedded Self-Organized InN Quantum Dots on GaN (0001) in MOVPE
    F. Ivaldi, J. Domagala, S. Kret, C. Meissner, M. Pristovsek, M. Högele, M. Kneissl
    Jap. J. Appl Phys. 50 (2011) 031004

  15. Crystal orientation of GaN layers on (10-10) Sapphire
    M. Frentrup, S. Ploch, M. Pristovsek, M. Kneissl
    phys. stat. sol. (b) 248 (3) (2011) 583–587

  16. High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor
    J. Stellmach, M. Pristovsek, . Savaş, J. Schlegel, E. Y. Yakovlev, M. Kneissl
    J. Crystal Growth 315 (2011) 229–232

  17. Determination of the complex linear electro-optic coefficient of GaAs and InP
    M. Pristovsek
    phys. stat. sol. (b) 247 (2010) 1974–1978

  18. Orientation control of GaN 11-22 and 10-13 grown on (10-10) sapphire by metal-organic vapor phase epitaxy
    S. Ploch, M. Frentrup, T. Wernicke, M. Pristovsek, M. Weyers, M. Kneissl
    J. Crystal Growth 312 (2010) 2171–2174

  19. Growth of semipolar (10-1-3) InN on m-plane sapphire using metal-organic vapor phase epitaxy
    D. V. Dinh, M. Pristovsek, R. Kremzow, M. Kneissl
    phys. stats. sol. RRL 4 (2010) 127–129

  20. Metalorganic Vapor Phase Epitaxy of InN on GaN using tertiary-butylhydrazine as Nitrogen Source
    R. Kremzow, M. Pristovsek, J. Stellmach, . Savas, M. Kneissl
    J. Crystal Growth 312 (2010) 1983–1985

  21. Shape of InN nanostructures on GaN (001)
    S. Ploch, C. Meißner, M. Pristovsek, M. Kneissl
    phys. stat. sol. (c) 6(S2) (2009) S574–S577

  22. Growth mode of InGaN on GaN (0001) in MOVPE
    M. Pristovsek, J. Stellmach, M. Leyer, M. Kneissl
    phys. stat. sol. (c) 6(S2) (2009) S565–S569

  23. Volmer-Weber growth mode on InN quantum dots on GaN (0001) by MOVPE
    C. Meißner, S.Ploch, M. Pristovsek, M. Kneissl
    phys. stat. sol. (c) 6(S2) (2009) S545–S548

  24. Growth and characterisation of manganese doped InAsP
    M. Pristovsek, C. Meißner, M. Kneissl, R. Jakomin, S. Vantaggio, L. Tarricone
    J. Crystal Growth 310 (2008) 5028–5031

  25. Indium nitride quantum dot growth modes in metalorganic vapour phase epitaxy
    C. Meissner, S. Ploch, M. Leyer, M. Pristovsek, M. Kneissl
    J. Crystal Growth 310 (2008) 4959–4962

  26. The critical thickness of InGaN on (0001) GaN
    M. Leyer, J. Stellmach, C. Meissner, M. Pristovsek, M. Kneissl
    J. Crystal Growth 310 (2008) 4913–4915

  27. Ripening of InAs quantum dots on GaAs (0 0 1) investigated with in situ scanning tunneling microscopy in metal-organic vapor phase epitaxy
    R. Kremzow, M. Pristovsek, M. Kneissl
    J. Crystal Growth 310 (2008) 4751–5753

  28. Properties of InMnP (0 0 1) grown by MOVPE
    M. Pristovsek, A. Philippou, B. Rähmer, W. Richter
    J. Crystal Growth 310 (2008) 4046–4049

  29. Segregation and desorption of antimony in InP in MOVPE
    S. Weeke, M. Leyer, M. Pristovsek, F. Brunner, W. Richter
    J. Crystal Growth 298 (2007) 159–162

  30. Homoepitaxial growth rate measurement using in-situ Reflectance Anisotropy Spectroscopy
    C. Kaspari, M. Pristovsek, W. Richter
    J. Crystal Growth 298 (2007) 46–49

  31. in-situ Scanning Tunnelling Microscopy during Metal-Organic Vapour Phase Epitaxy
    M. Pristovsek, B. Rähmer, M. Breusig, R. Kremzow, W. Richter
    J. Crystal Growth 298 (2007) 8–11

  32. Modified STM images growth inside an MOCVD chamber
    M. Pristovsek
    compound semiconductor 11 (2006) 14–16

  33. In-situ Scanning Tunneling Microscopy during Metal-organic Vapour Phase Epitaxy
    B. Rähmer, M. Pristovsek, M. Breusing, R. Kremzow, W. Richter
    Appl. Phys. Lett. 89(6) (2006) 063108

  34. InN growth on sapphire using different nitridation procedures
    M. Drago, C. Werner, M. Pristovsek, U. W. Pohl, W. Richter
    phys. stat. sol. (a) 203 (2006) 1622–1625

  35. Development of InN metalorganic vapor phase epitaxy using in-situ spectroscopic ellipsometry
    M. Drago, C. Werner, M. Pristovsek, U. W. Pohl, W. Richter
    Crys. Res. Technol. 40(10-11) (2005) 993–996

  36. A fast reflectance anisotropy spectrometer for in situ growth monitoring
    C. Kaspari, M. Pristovsek, W. Richter
    phys. stat. sol. (b) 242(13) (2005) 2561–2569

  37. Growth of strained GaAsSb layers on GaAs (001) in MOVPE
    M. Pristovsek, M. Zorn, U. Zeimer, M. Weyers
    J. Crystal Growth 276 (2005) 347–353

  38. InN Growth and Annealing Investigations using in-situ Spectroscopic Ellipsometry
    M. Drago, T. Schmidtling, C. Werner, M. Pristovsek, U. Pohl, W. Richter
    J. Crystal Growth 272 (2004) 87–93

  39. Nitrogen.arsenic exchange processes and investigation of the nitrided GaAs surfaces in MOVPE
    V. Hoffmann, F. Poser, C. Kaspari, S. Weeke, M. Pristovsek, W. Richter
    J. Crystal Growth 272 (2004) 30–36

  40. Structural analysis by reflectance anisotropy spectroscopy: As and Sb on GaAs(110)
    O. Pulci, K. Fleischer, M. Pristovsek, S. Tsukamoto, R. D. Sole, W. Richter
    J. Phys.: Cond. Matter 16 (2004) S4367–S4374

  41. In-situ study of low-temperature growth and Mn and Si and Sn doping of GaAs (001) in molecular beam epitaxy
    M. Pristovsek, S. Tsukamoto
    J. Crystal Growth 265 (2004) 425–433

  42. Lateral short range ordering of step bunches in InGaAs/GaAs superlattices
    M. Hanke, M. Schmidbauer, R. Kühler, H. Kirmse, M. Pristovsek
    J. Appl. Phys. 95(4) (2004) 1736–1739

  43. In-situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in MOVPE
    M. Pristovsek, M. Zorn, M. Weyers
    J. Crystal Growth 262 (2004) 78–83

  44. Gallium-rich reconstructions on GaAs(001)
    M. Pristovsek, S. Tsukamoto, A. Ohtake, N. Koguchi, B. G. Orr, W. G. Schmidt, J. Bernholc
    phys. stat. sol. b 240 (2003) 91–98

  45. In situ scanning tunneling microscopy of InAs quantum dots on GaAs(0 0 1) during molecular beam epitaxial growth
    G. R. Bell, M. Pristovsek, S. Tsukamoto, B. G. Orr, Y. Arakawa, N. Koguchi
    Surf. Sci. 544(2-3) (2003) 234–240

  46. Ga-rich GaAs(0 0 1) surfaces observed by STM during high-temperature annealing in MBE
    S. Tsukamoto, M. Pristovsek, A. Ohtake, B. G. Orr, G. R. Bell, T. Ohno, N. Koguchi
    J. Crystal Growth 251 (2003) 46–50

  47. Influence of the reconstruction of GaAs (0 0 1) on the electro-optical bulk properties
    M. Pristovsek, S. Tsukamoto, B. Han, J.-T. Zettler, , W. Richter
    J. Crystal Growth 248 (2003) 254–258

  48. Structure of Ga-stabilized GaAs(0 0 1) surfaces at high temperatures
    A. Ohtake, S. Tsukamoto, M. Pristovsek, N. Koguchi
    Appl. Surf. Sci. 212-213 (2003) 146–150

  49. Novel Organopalladium Material Formed on a Sulfur-Terminated GaAs(001) Surface
    M. Arisawa, S. Tsukamoto, M. Shimoda, M. Pristovsek, A. Nishida
    Jpn. J. Appl. Phys. 41(11A) (2002) L1197–L1199

  50. Structure analysis of the Ga-stabilized GaAs(001) - c(8x2) surface at high temperatures
    A. Ohtake, S. Tsukamoto, M. Pristovsek, N. Koguchi, M. Ozeki
    Phys. Rev. B 65 (2002) 233311

  51. Real-time calibration of wafer temperature and growth rate and composition by optical in-situ techniques during AlxGa1-xAs growth in MOVPE
    K. Haberland, A. Kaluza, M. Zorn, M. Pristovsek, H. Hardtdegen, M. Weyers, J.-T. Zettler, W. Richter
    J. Crystal Growth 240 (2002) 87–97

  52. In-situ Determination of the Carrier Concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy
    M. Pristovsek, S. Tsukamoto, N. Koguchi, B. Han, K. Haberland, J.-T. Zettler, W. Richter, M. Zorn, M. Weyers
    phys. stat. sol. (a) 188 (2001) 1423–1429

  53. In-situ Investigation of GaAs (001) Intrinsic Carbon p-Doping in Metal-organic Vapour Phase Epitaxy
    M. Pristovsek, B. Han, J.-T. Zettler, W. Richter
    J. Crystal Growth 221 (2000) 149–155

  54. Surface structure of ordered InGaP(001): The (2x4) reconstruction
    P. Vogt, K. Lüdge, M. Zorn, M. Pristovsek, W. Braun, W. Richter, N. Esser
    Phys. Rev. B 62(19) (2000) 12601–12604

  55. Atomic structure and composition of the (2x4) reconstruction of InGaP(001)
    P. Vogt, K. Lüdge, M. Zorn, M. Pristovsek, W. Braun, W. Richter, N. Esser
    J. Vac. Sci. Technol. B 18 (2000) 2210–2214

  56. Diffusion of Ga on GaAs (113) in [1-10] direction in MOVPE
    M. Pristovsek, F. Poser, J.-T. Zettler, W. Richter
    Appl. Surf Sci. 166 (2000) 433–436

  57. Dynamic Study of the Surfaces of (001) Gallium Arsenide in Metal-organic Vapour Phase Epitaxy during Arsenic Desorption
    M. Pristovsek, T. Trepk, M. Klein, J.-T. Zettler, W. Richter
    J. Appl. Phys. 87 (2000) 1245–1250

  58. GaP(001) and InP(001): Reflectance Anisotropy and Surface Geometry
    N. Esser, W. Schmidt, J. Bernholc, A. Frisch, P. Vogt, M. Zorn, M. Pristovsek, W. Richter, F. Bechstedt, T. Hannappel, S. Visbeck
    J. Vac. Sci. Technol. B 17 (1999) 1691–1696

  59. The (2x4) GaP(001) Surface: Atomic Structure and Optical Anisotropy
    A. Frisch, W. Schmidt, J. Bernholc, M. Pristovsek, N. Esser, W. Richter
    Phys. Rev. B 60(4) (1999) 2488–2494

  60. Spectroscopic process sensors in MOVPE device production
    K. Haberland, P. Kurpas, M. Pristovsek, J.-T. Zettler, M. Weyers, W. Richter
    Appl. Phys. A 68 (1999) 309–313

  61. Comparative study of the GaAs (113) and (115) and (001) and (11-5) and (11-3) and and (110) surfaces by atomic force microscopy and low energy electron diffraction and and reflectance anisotropy spectroscopy
    M. Pristovsek, H. Menhal, T. Schmidtling, N. Esser, W. Richter
    Microelectronics Journal 30 (1999) 449–453

  62. In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere
    H. Hardtdegen, M. Pristovsek, H. Menhal, J.-T. Zettler, W. Richter, D. Schmitz
    J. Crystal Growth 195 (1998) 211–216

  63. Response of the surface dielectric function to dynamic surfaces modifications: application of reflectance anisotropy spectroscopy and spectroscopic ellipsometry
    J.-T. Zettler, M. Pristovsek, T. Trepk, A. Shkrebtii, E. Steimetz, M. Zorn, W. Richter
    Thin Solid Films 313-314 (1998) 537–543

  64. Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques
    J.-T. Zettler, K. Haberland, M. Zorn, M. Pristovsek, W. Richter, P. Kurpas, , M. Weyers
    J. Crystal Growth 195 (1998) 151–162

  65. Reconstructions of the GaAs (113) surface
    M. Pristovsek, H. Menhal, T. Wehnert, J.-T. Zettler, T. Schmidtling, N. Esser, W. Richter, C. Setzer, J. Platen, K. Jacobi
    J. Crystal Growth 195 (1998) 1–5

  66. Photoluminescence scanning nearfield optical microscopy on III-V quantum dots
    D. Pahlke, F. Poser, E. Steimetz, M. Pristovsek, N. Esser, W. Richter
    phys. stat. sol. (a) 170 (1998) 401

  67. Atomic structure of InP(001)-(2x4): A dimer reconstruction
    W. Schmidt, F. Bechstedt, N. Esser, M. Pristovsek, C. Schultz, W. Richter
    Phys. Rev. B. 57(23) (1998) 14596–14599

  68. Ellipsometric and Reflectance-Anisotropy Measurements on Rotating Samples
    K. Haberland, O. Hunderi, M. Pristovsek, J.-T. Zettler, W. Richter
    Thin Solid Films 313-314 (1998) 620–624

  69. Optical anisotropies of InP(001) surfaces
    C. Goletti, N. Esser, U. Resch-Esser, V. Wagner, J. Foeller, M. Pristovsek, W. Richter
    J. Appl. Phys. 81 (1997) 3611–3615

  70. Structure of InP (001) surfaces prepared by decapping and by ion bombardment and annealing
    D. Pahlke, J. Kinsky, C. Schultz, M. Pristovsek, M. Zorn, N. Esser, W. Richter
    Phys. Rev. B 56 (1997) R1661–R1663

  71. In-situ surface passivation of III-V-semiconductors in MOVPE by amorphous As and P layers
    K. Knorr, M. Pristovsek, U. Resch-Esser, N. Esser, M. Zorn, W. Richter
    J. Crystal Growth 170 (1997) 230–236

  72. Semiconductor Characterization - Present Status and Future Needs
    J.-T. Zettler, W. Richter, K. Ploska, M. Zorn, J. Rumberg, C. Meyne, M. Pristovsek
    (AIP Press Woodbury NY, 1996) 537–543

  73. Scanning-tunneling-microscopy study of InP (001) surfaces prepared by UHV decapping of MOVPE-grown samples
    N. Esser, U. Resch-Esser, M. Pristovsek, W. Richter
    Phys. Rev. B 53(20) (1996) R13257–R13259

  74. Growth oscillations with monolayer periodicity monitored by ellipsometry during MOVPE of GaAs (001)
    J.-T. Zettler, T. Wethkamp, M. Zorn, M. Pristovsek, C. Meyne, K. Ploska, W. Richer
    Appl. Phys. Lett. 67 (1995) 3783–3785

  75. Metalorganic Vapour Phase Epitaxial Growth on Vicinal GaAs (001) Surfaces Studied by Reflectance Anisotropy Spectroscopy
    K. Ploska, M. Pristovsek, W. Richter, J. Jönsson, I. Kamiya, J.-T. Zettler
    phys. stat. sol. (a) 152 (1995) 49–59

  76. Reflectance Anisotropy Oscillations during MOCVD and MBE Growth of GaAs (001)
    J.-T. Zettler, J. Rumberg, K. Ploska, K. Stahrenberg, M. Pristovsek, W. Richter, M. Wassermeier, P. Schützendüwe, L. Däweritz
    phys. stat. sol. (a) 152 (1995) 35–47

  77. Surface processes before and during growth of GaAs(001)
    K. Ploska, J.-T. Zettler, W. Richter, J. Jönsson, F. Reinhardt, J. Rumberg, M. Pristovsek, M. Zorn, D. Westwood, R. H. Williams
    J. Crystal Growth 145 (1994) 44–52

  78. Efficiency of arsenic and phosphorous precursors investigated by reflectance anisotropy spectroscopy
    P. Kurpas, J. Jönsson, W. Richter, D. Gutsche, M. Pristovsek, M. Zorn
    J. Crystal Growth 145 (1994) 36–43

 

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