SYMPOSIUM  P Optical Characterization of Semiconductor Layers and Surfaces  to E-MRS homepage in Strasbourg

 

•  General Information
•  Program
•  Proceeding
•  Sponsors

The aim of this E-MRS symposium is to survey the current status of optical spectroscopy for semiconductor characterization. It is intended to bring together scientists working on the further development of the related experimental and theoretical techniques with those who apply the spectroscopic systems for the characterization of advanced semiconductor materials and structures.

Emphasis will be placed on the nondestructive in-situ and ex-situ optical characterization of:

• Surfaces

• Epitaxy and growth

• Electronic, magnetic and geometric structure

• Strain phenomena

• Heterostructures and nanostructures (quantum wells, -wires, -dots, superlattices)

• Buried interfaces

• Surface reactions

Methods to be discussed during the symposium will cover:

• Ellipsometry, RAS/RDS, DRS, reflectometry, modulation spectroscopy

• Raman spectroscopy, IR-spectroscopy

• Elastic light scattering

• Second harmonic generation, sum and difference frequency generation

• Time-resolved spectroscopy, ultra short-time optical diagnostics

• Scanning near-field optical microscopy (SNOM)

• Scanning tunneling luminescence (STL)

• X-ray fluorescence spectroscopy

• PL and PLE

• Theoretical methods for calculating surface optical properties

• Algorithms for real-time optical data analysis and process control

There will be sessions on the following topics:

• Optical Surface Science: Characterization of clean semiconductor surfaces

• In-situ Characterization and Control of epitaxial growth

• Nondestructive characterization of complex structures and devices

• Optics of Semiconductor Nanostructures

• Nonlinear, time-resolved, spacially resolved techniques

• Optical characterization of wide-gap materials

• Characterization of amorphous, poly- and nano-crystalline materials

• Y. Borensztein, (Paris, France), "Investigation of 3C-SiC(001) surface reconstructions by Reflectance Anisotropy Spectroscopy"

• F. Briones  (Madrid, Spain)  "Chemical Modulation Techniques for in-situ optical characterization of III-V surfaces in MBE"

• R. Carius, (Juelich, Germany), "Spectroscopy of photovoltaic materials and devices"

• W. M. Chen (Linköping, Sweden)  "Applications of optically detected magnetic resonance in physics and engineering of semiconductor layered structures"

• R. Collins, (PennState, USA), "Growth of amorphous and nanocrystalline layers: in-situ studies"

• M. Ebert, (Raleigh, NC, USA), "In-situ monitoring and control of MOVPE growth by combined RDS and ellipsometry measurements"

• N.V. Edwards, (Linköping, Sweden), "Optical Characterization of wide-gap semiconductors"

• M. Fried, (Budapest, Hungary), "Nondestructive optical depth profiling & real-time evaluation of spectroscopic data"

• J. M. Hvam (Copenhagen, Denmark)  "Exciton dynamics in semiconductor nanostructures"

• K. Leo, (Dresden, Germany), "Observation of Wannier-Stark ladders and Bloch oscillations"

• G. Onida, (Rome, Italy), "Theory of surface optical properties"

• K. Ozanyan (Sheffield, GB) " In-situ Characterization and Control of III-V CBE growth"

• D. Paget, (Palaiseau, France), "Optical characterization of surfaces"

• D. Pahlke, (Berlin, Germany), "Scanning Near-Field Optical Microscopy of III-V Nanostructures"

• L. Samuelson, (Lund, Sweden), "Nano-optics of self-organized quantum dots"

• H. Schillinger, (Jena, Germany), "Characterization of SiC MBE layers and polytypes with SHG"

 

Scientiffic Committee: D. Aspnes, (Raleigh, NC, USA); F. Bechstedt, (Jena, Germany); J. Humlicek, (Brno, Czech Republic); J. McGilp, (Dublin, Ireland); B. Monemar, (Linkoeping, Sweden)

Overview

Session I         (Tuesday Morning)
Session II        (Tuesday Morning / Afternoon)
Session III       (Wednesday Afternoon / Friday Morning)
Session IV       (Wednesday Afternoon)
Session V        (Thursday Morning)
Session VI       (Thursday Afternoon)
Session VII      (Friday Morning)
 
 
 
 
 
 
 

The respective instructions for preparing the manuscripts you will find in:

   The Elsevier Instructions for Authors (RTF-File) .
 
 
 
 
 

Sentech Instruments GmbH Berlin  (www.sentech.de)